Germanium-on-silicon mid-infrared grating couplers with low-reflectivity inverse taper excitation

被引:45
作者
Alonso-Ramos, Carlos [1 ]
Nedeljkovic, Milos [2 ]
Benedikovic, Daniel [1 ]
Penades, Jordi Soler [2 ]
Littlejohns, Callum G. [2 ,3 ]
Khokhar, Ali Z. [2 ]
Perez-Galacho, Diego [1 ]
Vivien, Laurent [1 ]
Cheben, Pavel [4 ]
Mashanovich, Goran Z. [2 ]
机构
[1] Univ Paris Saclay, Univ Paris 11, Ctr Nanosci & Nanotechnol, CNRS,Orsay C2N, F-91405 Orsay, France
[2] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England
[3] Nanyang Technol Univ, Silicon Ctr Excellence, 50 Nanyang Ave, Singapore 639798, Singapore
[4] CNR, Ottawa, ON K1A 0R6, Canada
基金
英国工程与自然科学研究理事会; 新加坡国家研究基金会;
关键词
WAVE-GUIDE; CASCADE LASERS; DESIGN; SI;
D O I
10.1364/OL.41.004324
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A broad transparency range of its constituent materials and compatibility with standard fabrication processes make germanium-on-silicon (Ge-on-Si) an excellent platform for the realization of mid-infrared photonic circuits. However, the comparatively large Ge waveguide thickness and its moderate refractive index contrast with the Si substrate hinder the implementation of efficient fiber-chip grating couplers. We report for the first time, to the best of our knowledge, a single-etch Ge-on-Si grating coupler with an inversely tapered access stage, operating at a 3.8 mu m wavelength. Optimized grating excitation yields a coupling efficiency of -11 dB (7.9%), the highest value reported for a mid-infrared Ge-on-Si grating coupler, with reflectivity below -15 dB (3.2%). The large periodicity of our higher-order grating design substantially relaxes the fabrication constraints. We also demonstrate that a focusing geometry allows a 10-fold reduction in inverse taper length, from 500 to 50 mu m. (C) 2016 Optical Society of America
引用
收藏
页码:4324 / 4327
页数:4
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