Status and direction of communication technologies - SiGeBiCMOS and RFCMOS

被引：53

作者：

Joseph, AJ ^{[1
]}

Harame, DL

Jagannathan, B

Coolbaugh, D

Ahlgren, D

Magerlein, J

Lanzerotti, L

Feilchenfeld, N

St Onge, S

Dunn, J

Nowak, E

机构：

[1] IBM Microelect Div, Semicond Res & Dev Ctr, Essex Jct, VT 05452 USA

[2] Semicond Res & Dev Ctr, Hopewell Jct, NY 12533 USA

[3] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

PROCEEDINGS OF THE IEEE | 2005年 / 93卷 / 09期

关键词：

BiCMOS; communication technology; RFCMOS; SiGe heterojunction bipolar transistor (HBT);

D O I：

10.1109/JPROC.2005.852547

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the status and direction of silicon semiconductor technologies targeted for applications such as wireless, networking, instrumentation, and storage markets. Various technological aspects for multiple branches of RF foundry technologies that are based on the standard foundry compatible CMOS node are discussed - SiGe BiCMOS HP ("high performance") tailored to high-frequency applications, SiGe BiCMOS WL ("cost performance") tailored to wireless/storage applications, and RF-CMOS optimized for low-cost consumer applications. Future opportunities and challenges for advancement in RF technologies are described in light of CMOS and SiGe heterojunction bipolar transistor scaling. In addition, we discuss the maturity of SiGe BiCMOS by looking at the levels of integration and manufacturability.

引用

页码：1539 / 1558

页数：20

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