Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures

被引:37
作者
Savero Torres, W. [1 ,2 ]
Sierra, J. F. [1 ,2 ]
Benitez, L. A. [1 ,2 ,3 ]
Bonell, F. [1 ,2 ]
Costache, M. V. [1 ,2 ]
Valenzuela, S. O. [1 ,2 ,4 ]
机构
[1] CSIC, Catalan Inst Nanosci & Nanotechnol ICN2, Campus UAB, Barcelona 08193, Spain
[2] BIST, Campus UAB, Barcelona 08193, Spain
[3] Univ Autonoma Barcelona, Barcelona 08010, Spain
[4] ICREA, Barcelona 08070, Spain
基金
欧洲研究理事会;
关键词
graphene; spin Hall effect; spintronics; spin precession; ROOM-TEMPERATURE; CONVERSION;
D O I
10.1088/2053-1583/aa8823
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large spin resistance of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by developing an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spinrelaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems.
引用
收藏
页数:8
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