Synthesis of ZnO Nanowire Array Film on Mg-Doped Gallium Nitride Substrate by Simple Hydrothermal Method

被引：0

作者：

Chen, Huiquan ^{[1
]}

Fang, Yanyan ^{[1
]}

Li, Senlin ^{[1
]}

Qi, Zhiqiang ^{[1
]}

Huang, Xuhua ^{[1
]}

Tian, Yu ^{[2
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China

[2] Jianghan Univ, Dept Phys, Wuhan 430056, Peoples R China

来源：

SYNTHESIS AND REACTIVITY IN INORGANIC METAL-ORGANIC AND NANO-METAL CHEMISTRY | 2015年 / 45卷 / 07期

关键词：

ZnO nanowires; ZnO film; metal organic chemical vapor deposition; gallium nitride; LOW-TEMPERATURE; PATTERNED GROWTH; FABRICATION; DEPOSITION; NANORODS;

D O I：

10.1080/15533174.2013.862669

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

ZnO nanowire array films, composed of well-aligned ZnO nanowires with about 200 nm in diameter and 1 mu m in length, were successfully synthesized on Mg-doped gallium nitride by hydrothermal method. The films possess quite flattened surface. In the synthesized process, there was no catalyst used. Growth conditions are comprehensively discussed in the process of aqueous solution method. It was found that the length of ZnO nanowires and the thickness of the film could be tunable by altering solution concentration and growth time. Such ZnO film assembled of vertically aligned nanowire may have potential applications as UV light-emitting diodes.

引用

页码：1045 / 1048

页数：4

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