Fabrication of doped SrZrO3 thin films by liquid delivery MOCVD

被引：0

作者：

Kawamura, Hiroshi ^{[1
]}

Ohkita, Shuichi ^{[1
]}

Uchiyama, Kiyoshi ^{[1
]}

Shiosaki, Tadashi ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

来源：

2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/ISAF.2007.4393183

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thin film deposition of proton conductive SrZrO(3) (SZO) was demonstrated by liquid delivery Metal-Organic Chemical Vapor Deposition (MOCVD). The deposition conditions, especially oxygen flow, affected a film quality of the SZO thin films as well as deposition temperatures. We consider the materials engineering of impurity doping using this deposition technique will improve the proton conductivity of the SZO films for future fuel cell applications.

引用

页码：108 / 109

页数：2

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