InN/GaN SQW and DH structures grown by radio frequency plasma-assisted MBE

被引：10

作者：

Che, SB ^{[1
]}

Terashima, W ^{[1
]}

Ohkubo, T ^{[1
]}

Yoshitani, M ^{[1
]}

Hashimoto, N ^{[1
]}

Akasaka, K ^{[1
]}

Ishitani, Y ^{[1
]}

Yoshikawa, A ^{[1
]}

机构：

[1] Chiba Univ, Dept Elect & Mech Engn, Chiba 260, Japan

来源：

Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7 | 2005年 / 2卷 / 07期

关键词：

D O I：

10.1002/pssc.200461437

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We studied the fabrication of InN/GaN single-quantum well (SQW) and double hetero (DH) structures by the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) system with in-situ monitoring of spectroscopic ellipsometry (SE) and reflection high-energy electron diffraction (RHEED). By using this system, we could monitor and control the epitaxial growth front in real time and succeeded in growing the SQW and/or DH structures whose well layer thickness ranged from 5 nm to 40 nm. In the photoluminescence measurements at 13 K, single emission peak was observed in the range from 1.55 mu m to 1.7 mu m depending on the well layer thickness.. The observed blue shift was ascribed to the quantum effect of InN/GaN SQW. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2258 / 2262

页数：5

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