InN/GaN SQW and DH structures grown by radio frequency plasma-assisted MBE

We studied the fabrication of InN/GaN single-quantum well (SQW) and double hetero (DH) structures by the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) system with in-situ monitoring of spectroscopic ellipsometry (SE) and reflection high-energy electron diffraction (RHEED). By using this system, we could monitor and control the epitaxial growth front in real time and succeeded in growing the SQW and/or DH structures whose well layer thickness ranged from 5 nm to 40 nm. In the photoluminescence measurements at 13 K, single emission peak was observed in the range from 1.55 mu m to 1.7 mu m depending on the well layer thickness.. The observed blue shift was ascribed to the quantum effect of InN/GaN SQW. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.