n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires

被引：50

作者：

Gutsche, Christoph ^{[1
]}

Lysov, Andrey

Regolin, Ingo

Blekker, Kai

Prost, Werner

Tegude, Franz-Josef

机构：

[1] Univ Duisburg Essen, Solid State Elect Dept, D-47048 Duisburg, Germany

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

关键词：

OHMIC CONTACTS; INP; SENSORS; DIODES;

D O I：

10.1007/s11671-010-9815-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400 degrees C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations N(D) of GaAs nanowires are found to vary from 7 x 10(17) cm(-3) to 2 x 10(18) cm(-3). The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices.

引用

页码：1 / 6

页数：6

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