Finite-Difference Time-Domain Analysis of Terahertz Devices

被引：0
|
作者：
Shibayama, J. [1 ]
Yamauchi, J. [1 ]
Nakano, H. [1 ]
机构：
[1] Hosei Univ, Fac Sci & Engn, Tokyo 1848584, Japan
来源：
2014 INTERNATIONAL CONFERENCE ON ELECTROMAGNETICS IN ADVANCED APPLICATIONS (ICEAA) | 2014年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This article presents several topics regarding the FDTD analysis of terahertz (THz) devices. First, the treatment of metal is discussed with attention to the use of the perfect electric conductor approximation and the Drude model that takes metal dispersion into account. Next, two ways to support THz waves are explained on the basis of the propagation characteristics of surface plasmon polaritons. Furthermore, practical THz devices consisting of frequency selective surfaces are analyzed using the periodic FDTD method. Finally, the implicit FDTD method is applied to the efficient analysis of THz devices.
引用
收藏
页码：367 / 368
页数：2
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