Halide vapor phase epitaxy of ZnO studied by thermodynamic analysis and growth experiments

被引：5

作者：

Fujii, Tetsuo ^{[1
,2
]}

Yoshii, Naoki ^{[3
]}

Kumagai, Yoshinao ^{[2
]}

Koukitu, Akinori ^{[2
]}

机构：

[1] ROHM Co Ltd, Res & Dev Headquarters, Ukyo Ku, Kyoto 6158585, Japan

[2] Tokyo Univ Agr & Technol, Dept Appl Chem, Grad Sch Engn, Koganei, Tokyo 1848588, Japan

[3] Tokyo Electron Ltd, Technol Dev Ctr, Yamanashi 4070192, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 314卷 / 01期

关键词：

Thermodynamics; Halide vapor phase epitaxy; Oxides; Zinc compounds; Semiconducting II-VI materials; GA-DOPED ZNO; ZINC-OXIDE; THIN-FILMS; DEPOSITION; TEMPERATURE; TRANSPORT; GACL3;

D O I：

10.1016/j.jcrysgro.2010.11.097

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Thermodynamic analyses of halide vapor phase epitaxy (HVPE) for the growth of ZnO were conducted to investigate the effects of growth conditions against growth rates. The partial pressures of gaseous species in equilibrium with ZnO and the resultant driving force for ZnO deposition are calculated with respect to temperatures, input H(2) pressures and input VI/II ratios. It has been revealed that the driving force is weakly dependent on the temperature and is still positive even at 1200 degrees C, while it greatly decreases at higher temperatures in the presence of H2. The driving force is also significantly influenced when the VI/II ratio is below 1000. The experimental growth rates substantially agree with the dispositions of the driving force expected from the thermodynamic analyses. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：108 / 112

页数：5

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