Nonvolatile photoelectric memory with CsPbBr3 quantum dots embedded in poly(methyl methacrylate) as charge trapping layer

被引:24
作者
Li, Qingyan [1 ]
Li, Tengteng [1 ]
Zhang, Yating [1 ]
Yu, Yu [1 ]
Chen, Zhiliang [1 ]
Jin, Lufan [1 ,2 ]
Li, Yifan [1 ]
Yang, Yue [1 ]
Zhao, Hongliang [1 ]
Li, Jie [1 ]
Yao, Jianquan [1 ]
机构
[1] Tianjin Univ, Key Lab Optoelect Informat Technol, Sch Precis Instruments & Optoelect Engn, Minist Educ, Tianjin 300072, Peoples R China
[2] Zhejiang Ind & Trade Vocat Coll, Dept Mat Engn, Wenzhou 325003, Peoples R China
基金
中国国家自然科学基金;
关键词
Photoelectric memory; Inorganic perovskite quantum dots; Organic field-effect transistor; CESIUM LEAD HALIDE; FLOATING-GATE; TRANSISTOR MEMORY; LOW-VOLTAGE; PEROVSKITE; NANOCRYSTALS; PERFORMANCE; COMPOSITE; MECHANISM; EMISSION;
D O I
10.1016/j.orgel.2019.105461
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nonvolatile organic field-effect transistor (OFET) photoelectric memories have attracted tremendous attention due to special photoelectric memory mechanism and application area, such as image capture and light information storage. Unfortunately, conventional two-step preparation method of floating gate and tunneling layer is complex and not conducive to large-area. Here, a nonvolatile OFET photoelectric memory with pemvskite quantum dots (QDs) embedded in poly(methyl methacrylate) (PMMA) as charge trapping layer is reported. The photoelectric memory can effectively accumulate and release photo-generated carriers during photo- or photoelectric programming operations and electrical erasing operation. The memory characteristics of the photoelectric memory are comparable to that of traditional memories with two-step preparation technique of floating gate and tunneling layer. In addition, the memory device presents well retention time and endurance property even after being exposed to air for two weeks. Hence, the memory using QDs/PMMA composites as charge trapping layer shows great potential for the application in photoelectric devices.
引用
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页数:7
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