Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

被引：248

作者：

Okamoto, Dai ^{[1
]}

Yano, Hiroshi ^{[1
]}

Hirata, Kenji ^{[1
]}

Hatayama, Tomoaki ^{[1
]}

Fuyuki, Takashi ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Nara 6300192, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 07期

关键词：

Interface state density; phosphorus-doped oxide; phosphoryl chloride (POCl3); silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs); INTERFACE; OXIDATION; DENSITY;

D O I：

10.1109/LED.2010.2047239

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a new technique for fabricating 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with high inversion channel mobility. P atoms were incorporated into the SiO2/4H-SiC (0001) interface by postoxidation annealing using phosphoryl chloride (POCl3). The interface state density near the conduction band edge of 4H-SiC was reduced significantly, and the peak field-effect mobility of lateral 4H-SiC MOSFETs on (0001) Si face was improved to 89 cm(2)/V . s by POCl3 annealing at 1000 degrees C.

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页码：710 / 712

页数：3

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