Complete micropipe dissociation in 4H-SiC(03(3)over-bar8) epitaxial growth and its impact on reverse characteristics of Schottky barrier diodes

被引：0

作者：

Kimoto, T ^{[1
]}

Danno, K

Fujihira, K

Shiomi, H

Matsunami, H

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

[2] SiXON Ltd, Kyoto 6150065, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS - 2002 | 2002年 / 433-4卷

关键词：

(03(3)over-bar8); epitaxial growth; micropipe closing; Schottky barrier diode;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Micropipe dissociation has been investigated in homoepitaxial growth of 4H-SiC(03 (3) over bar8) by chemical vapor deposition. Almost complete (similar to100%) closing of micropipes was realized, although some of very large (> 3 mum) micropipes were threading into epilayers. Based on KOH etching experiments on various epilayers, the authors propose a model of micropipe dissociation in 4H-SiC(03 (3) over bar8) epitaxial growth. The reverse characteristics of Ni/4H-SiC(03 (3) over bar8) Schottky barrier diodes were significantly improved by micropipe closing.

引用

页码：197 / 200

页数：4

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