Structure and mechanical performance of nitrogen doped diamond-like carbon films

被引：0

作者：

Zhang, Huayu ^{[1
]}

Liu, Liangxue

Wang, Yulei

Ma, Hongtao

Liu, Fanxin

机构：

[1] Shenzhen Grad Sch, Harbin Inst Technol, Shenzhen 518055, Peoples R China

[2] SAE Technol Dev Dongguan Co Ltd, Dongguan 523087, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY | 2007年 / 23卷 / 04期

关键词：

nitrogen doped diamond-like carbon films; ECR-CVD; structure; mechanical performance; TETRAHEDRAL AMORPHOUS-CARBON; THIN-FILMS; ELECTRICAL-PROPERTIES; ION-IMPLANTATION; VACUUM-ARC; DEPOSITION; DLC; TEMPERATURE; TECHNOLOGY; RESISTANCE;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nitrogen doped diamond-like carbon (DLC:N) films were prepared by electron cyclotron resonance chemical vapor deposition (ECR-CVD) on polycrystalline Si chips. Film thickness is about 50 rim. Auger electron spectroscopy (AES) was used to evaluate nitrogen content, and increasing N-2 flow improved N content from 0 to 7.6%. Raman and X-ray photoelectron spectroscopy (XPS) analysis results reveal N-sp(3)C and N-sp(2)C structure. With increasing the N2 flow, sp(3)C decreases from 73.74% down to 42.66%, and so does N-sp(3)C from 68.04% down to 20.23%. The hardness decreases from 29.18 GPa down to 19.74 GPa, and the Young's modulus from 193.03 GPa down to 144.52 GPa.

引用

页码：491 / 494

页数：4

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