Ho:LaF3 single crystal as potential material for 2 μm and 2.9 μm lasers

被引:26
作者
Hong, Jiaqi [1 ,2 ]
Zhang, Lianhan [1 ]
Zhang, Peixiong [1 ,2 ]
Xu, Min [1 ]
Hang, Yin [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100039, Peoples R China
基金
中国国家自然科学基金;
关键词
Optical property; Single crystal; SPECTROSCOPIC PROPERTIES; ENERGY-LEVELS; HOLMIUM; HO3+; ABSORPTION; EMISSION; GROWTH; LAF3; TM;
D O I
10.1016/j.infrared.2016.04.024
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Optical properties of a Ho-doped LaF3 single crystal have been detailed investigated as a promising material for 2 mu m and 2.9 mu m lasers for the first time. Judd-Ofelt theory was applied to analyze the absorption spectrum to determine the J-O intensity parameters Omega(t(t=2,4,6)), based on which the emission probabilities, branching ratio and radiative lifetime for the as-grown crystal were all calculated. The stimulated emission cross-sections of the I-5(7) -> I-5(8) and I-5(6) -> I-5(7) transitions were obtained by using the Fuchtbauer-Ladenburg method. The gain cross-section for 2 mu m emission becomes positive once the population inversion level reaches 30%. The Ho:LaF3 crystal shows long fluorescence lifetime of I-5(7) manifold (25.81 ms) as well as I-5(6) manifold (10.37 ms) compared with other Ho3+-doped crystals. It can be proposed that the Ho:LaF3 crystal may be a promising material for 2 mu m and 2.9 mu m laser applications. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:636 / 640
页数:5
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