Optical transitions in GaNAs/GaAs single quantum well

被引:0
作者
Luo, XD [1 ]
Xu, ZY [1 ]
Sun, BQ [1 ]
Pan, Z [1 ]
Li, LH [1 ]
Lin, YW [1 ]
Ge, WK [1 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
来源
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS | 2000年 / 1卷
关键词
GaNAs; photoluminescence; band offset; band bowing coefficient; localized exciton;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have investigated GaNAs/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL), time-resolved PL (TRPL) and photovoltaic (PV) techniques. The low temperature PL is dominated by spatially direct transitions involving electrons confined in GaNAs well and holes localized in the same GaNAs layer. This assignment was supported by PL decay time measurements and absorption line-shape analysis derived from the PV measurements. By fitting the experimental data with a simple calculation, the band offset of the GaN0.015As0.985/GaAS heterostructure was estimated, and a type II band lineup in GaN0.015As0.985/GaAs QWs was suggested. Moreover, DeltaE(C), the discontinuity of conductor band, is found to be a nonlinear function of the nitrogen (N) composition (x), and the average variation of DeltaE(C) is about 0.110eV per %N, The measured band bowing coefficient shows a strong function of x, giving an experimental support to the theoretic calculation of Wei et al [Ref.2].
引用
收藏
页码:677 / 680
页数:4
相关论文
共 12 条
  • [1] Localization and percolation in semiconductor alloys: GaAsN vs GaAsP
    Bellaiche, L
    Wei, SH
    Zunger, A
    [J]. PHYSICAL REVIEW B, 1996, 54 (24) : 17568 - 17576
  • [2] 1.29μm GalnNAs multiple quantum-well ridge-waveguide laser diodes with improved performance
    Borchert, B
    Egorov, AY
    Illek, S
    Komainda, M
    Riechert, H
    [J]. ELECTRONICS LETTERS, 1999, 35 (25) : 2204 - 2206
  • [3] Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
    Buyanova, IA
    Chen, WM
    Pozina, G
    Bergman, JP
    Monemar, B
    Xin, HP
    Tu, CW
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (04) : 501 - 503
  • [4] EXCITON TRANSFER BETWEEN LOCALIZED STATES IN CDS1-XSEX ALLOYS
    GOURDON, C
    LAVALLARD, P
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1989, 153 (02): : 641 - 652
  • [5] A 1.3-μm GaInNAs/GaAs single-quantum-well laser diode with a high characteristic temperature over 200 K
    Kitatani, T
    Nakahara, K
    Kondow, M
    Uomi, K
    Tanaka, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (2A): : L86 - L87
  • [6] Analysis of band offset in GaNAs/GaAs by X-ray photoelectron spectroscopy
    Kitatani, T
    Kondow, M
    Kikawa, T
    Yazawa, Y
    Okai, M
    Uomi, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (9A): : 5003 - 5006
  • [7] GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GANXAS1-X USING A N RADICAL AS THE N-SOURCE
    KONDOW, M
    UOMI, K
    HOSOMI, K
    MOZUME, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (8A): : L1056 - L1058
  • [8] Effects of rapid thermal annealing on the optical properties of GaNxAs1-x/GaAs single quantum well structure grown by molecular beam epitaxy
    Li, LH
    Pan, Z
    Zhang, W
    Lin, YW
    Zhou, ZQ
    Wu, RH
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) : 245 - 248
  • [9] BAND-GAP ENERGY AND BAND LINEUP OF III-V-ALLOY SEMICONDUCTORS INCORPORATING NITROGEN AND BORON
    SAKAI, S
    UETA, Y
    TERAUCHI, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (10): : 4413 - 4417
  • [10] Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures
    Sun, BQ
    Jiang, DS
    Luo, XD
    Xu, ZY
    Pan, Z
    Li, LH
    Wu, RH
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (20) : 2862 - 2864