Counting statistics in an InAs nanowire quantum dot with a vertically coupled charge detector

被引：16

作者：

Choi, T. ^{[1
]}

Ihn, T. ^{[1
]}

Schoen, S. ^{[2
]}

Ensslin, K. ^{[1
]}

机构：

[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] ETH, Lab 1, CH-8093 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 07期

关键词：

SINGLE-ELECTRON SPIN;

D O I：

10.1063/1.3687198

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A gate-defined quantum dot (QD) in an InAs nanowire is fabricated on top of a quantum point contact realized in a two-dimensional electron gas. The strong coupling between these two quantum devices is used to perform time-averaged as well as time-resolved charge detection experiments for electron flow through the quantum dot. We demonstrate that the Fano factor describing shot noise or time-correlations in single-electron transport depends in the theoretically expected way on the asymmetry of the tunneling barriers even in a regime where the thermal energy k(B)T is comparable to the single-particle level spacing in the dot. (C) 2012 American Institute of Physics. [doi:10.1063/1.3687198]

引用

页数：4

共 26 条

[21] Tunable Spin Loading and T1 of a Silicon Spin Qubit Measured by Single-Shot Readout [J].