Optimum rapid thermal activation of Mg-doped p-type GaN

被引：6

作者：

Nagamori, Motoi ^{[1
]}

Ito, Shuichi ^{[1
]}

Saito, Hiroshi ^{[1
]}

Shiojima, Kenji ^{[1
]}

Yamada, Shuhei ^{[2
]}

Shibata, Naoki ^{[2
]}

Kuzuhara, Masaaki ^{[1
]}

机构：

[1] Univ Fukui, Grad Sch Engn, Fukui 9108507, Japan

[2] Toyoda Gosei Corp, Inazawa, Aichi 4901312, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 04期

关键词：

gallium nitride; p-type; rapid thermal annealing; hole concentration; complex defects;

D O I：

10.1143/JJAP.47.2865

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, we describe the electrical properties of Mg-doped GaN annealed using rapid thermal annealing. Metal-organic vapor phase epitaxy (MOVPE)-grown samples with Mg concentrations ranging from 1.25 x 10(19) to 1 x 10(20) cm(-3) were annealed at various temperatures in a nitrogen atmosphere. It was found that the maximum hole concentration achieved after rapid thermal annealing is limited to approximately 8 x 10(17) cm(-3) at room temperature and its optimum annealing temperature decreases with increasing Mg concentration. The temperature dependence of hole concentration suggested that the formation of donor complex defects is responsible for the suppressed electrical activation of Mg acceptors after annealing at high temperatures higher than the optimum annealing temperature.

引用

页码：2865 / 2867

页数：3

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