Passivating gallium arsenide surface by gallium chalcogenide

被引：2
|
作者：
Bezryadin, N. N. [1 ]
Kotov, G. I. [1 ]
Kuzubov, S. V. [1 ]
Arsent'ev, I. N. [2 ]
Tarasov, I. S. [2 ]
Starodubtsev, A. A. [1 ]
Sysoev, A. B. [1 ]
机构：
[1] Voronezh State Tech Acad, Voronezh 394000, Russia
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2008年 / 34卷 / 05期
关键词：
D O I：
10.1134/S1063785008050209
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied the protective properties of thin films of gallium selenide formed by the method of heterovalent substitution on the surface of GaAs substrates. The data of transmission (Hitachi H-800) and scanning (JEOL JSM-638 OLV) electron microscopy showed that GaAs substrates treated with selenium vapor produced a more pronounced orienting action on the subsequent deposition of GaAs as compared to the substrates covered with a natural oxide. The processing of a GaAs substrate in selenium vapor followed by the removal of the resulting Ga2Se3 layer increases the degree of smoothness of the substrate surface on the atomic level.
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页码：428 / 430
页数：3
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