Passivating gallium arsenide surface by gallium chalcogenide

被引：2

作者：

Bezryadin, N. N. ^{[1
]}

Kotov, G. I. ^{[1
]}

Kuzubov, S. V. ^{[1
]}

Arsent'ev, I. N. ^{[2
]}

Tarasov, I. S. ^{[2
]}

Starodubtsev, A. A. ^{[1
]}

Sysoev, A. B. ^{[1
]}

机构：

[1] Voronezh State Tech Acad, Voronezh 394000, Russia

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2008年 / 34卷 / 05期

关键词：

D O I：

10.1134/S1063785008050209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the protective properties of thin films of gallium selenide formed by the method of heterovalent substitution on the surface of GaAs substrates. The data of transmission (Hitachi H-800) and scanning (JEOL JSM-638 OLV) electron microscopy showed that GaAs substrates treated with selenium vapor produced a more pronounced orienting action on the subsequent deposition of GaAs as compared to the substrates covered with a natural oxide. The processing of a GaAs substrate in selenium vapor followed by the removal of the resulting Ga2Se3 layer increases the degree of smoothness of the substrate surface on the atomic level.

引用

页码：428 / 430

页数：3

共 8 条

[1]

Bessolov V. N., 1998, FIZ TEKH POLUPROVODN, V32, P1281

[2]

Bezryadin N. N., 2002, VESTN VORONEZH GOS U, V1, P47

[3]

HWANG JS, 2003, J PHYS D, V1, P348

[4]

KOSHKIN VM, 1970, CURRENT PROBLEMS CHE, P26

[5]

PALATNIK LS, 1969, COMPOUNDS VARIABLE C, P434

[6]

SYSOEV BI, 1993, SEMICONDUCTORS+, V27, P69

[7]

SYSOEV BI, 1995, SEMICONDUCTORS+, V29, P12

[8] Formation of a native-oxide structure on the surface of n-GaAs under natural oxidation in air [J].

Torkhov, NA .

SEMICONDUCTORS, 2003, 37 (10) :1177-1184

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