Reflectivity modification of polymethylmethacrylate by silicon ion implantation

被引：44
作者：
Hadjichristov, Georgi B. [1 ]
Ivanov, Victor [2 ]
Faulques, Eric [3 ]
机构：
[1] Bulgarian Acad Sci, Georgi Nadjakov Inst Solid State Phys, BU-1784 Sofia, Bulgaria
[2] Univ Sofia, Fac Phys, Sofia 1164, Bulgaria
[3] Nantes Atlantic Univ, CNRS, UMR6502, Inst Mat Jean Rouxel, F-44322 Nantes, France
来源：
APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 15期
关键词：
ion implanted polymers; optical properties; reflectivity; polymethylmethacrylate; PMMA;
D O I：
10.1016/j.apsusc.2008.01.115
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The effect of silicon ion implantation on the optical reflection of bulk polymethylmethacrylate (PMMA) was examined in the visible and near UV. A low-energy (30 and 50 keV) Si+ beam at fluences in the range from 10(13) to 10(17) cm(-2) was used for ion implantation of PMMA. The results show that a significant enhancement of the reflectivity from Si+-implanted PMMA occurs at appropriate implantation energy and fluence. The structural modifications of PMMA by the silicon ion implantation were characterized by means of photoluminescence and Raman spectroscopy. Formation of hydrogenated amorphous carbon (HAC) layer beneath the surface of the samples was established and the corresponding HAC domain size was estimated. (C) 2008 Elsevier B.V. All rights reserved.
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收藏
页码：4820 / 4827
页数：8
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