N-type conductivity of nanostructured thin film composed of antimony-doped Si nanocrystals in silicon nitride matrix

被引：14

作者：

So, Y. -H. ^{[1
]}

Huang, S. ^{[1
]}

Conibeer, G. ^{[1
]}

Green, M. A. ^{[1
]}

机构：

[1] Univ New S Wales, ARC Photovolta Ctr Excellence, Sydney, NSW 2052, Australia

来源：

EPL | 2011年 / 96卷 / 01期

基金：

澳大利亚研究理事会;

关键词：

PHOTOLUMINESCENCE;

D O I：

10.1209/0295-5075/96/17011

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Highly conductive thin films composed of antimony-doped Si nanocrystals (Si-NCs) embedded in the Si3N4 matrix were prepared by co-sputtering technique. The N-type electrical behavior in the doped films as observed from Hall measurements was attributed to free carriers generation resulting from the effective Sb doping. Quantitative analysis has demonstrated that effective Sb doping at a concentration of 0.54 at.% results in an improvement on the electrical conductivity (sigma) by more than six orders of magnitude, up to 2.8x10(-2) S/cm. The charge transport mechanism can be explained well by the percolation-hopping model where the conductivity follows sigma similar to exp[-(T-0/T)](1/2) at temperature lower than 220 K. Copyright (C) EPLA, 2011

引用

页数：4

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