Growth of strongly biaxially aligned MgB2 thin films on sapphire by postannealing of amorphous precursors

被引:38
作者
Berenov, A
Lockman, Z
Qi, X
MacManus-Driscoll, JL
Bugoslavsky, Y
Cohen, LF
Jo, MH
Stelmashenko, NA
Tsaneva, VN
Kambara, M
Babu, NH
Cardwell, DA
Blamire, MG
机构
[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2BP, England
[2] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2BZ, England
[3] Univ Cambridge, Irc Superconduct, Cambridge CB3 0HE, England
关键词
D O I
10.1063/1.1424070
中图分类号
O59 [应用物理学];
学科分类号
摘要
MgB2 thin films were cold grown on sapphire substrates by pulsed laser deposition followed by postannealing in mixed, reducing gas, Mg rich, Zr gettered, environments (pO(2)similar to 10(-24) atm) at 750 and 950 degreesC. The films had T-c in the range 29-34 K, J(c) (20 K, H=0) in the range 3x10(4)-3x10(5) A cm(-2), and irreversibility fields H-* at 20 K of 4-6.2 T. An inverse correlation was found between T-c and H-*. The films had grain sizes of similar to0.1-1 mum and a strong biaxial alignment was observed in the 950 degreesC annealed film. (111) oriented MgO was also observed. Mg coating of films during crystallization appeared to improve film T-c. (C) 2001 American Institute of Physics.
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页码:4001 / 4003
页数:3
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