Growth of strongly biaxially aligned MgB2 thin films on sapphire by postannealing of amorphous precursors

被引：38

作者：

Berenov, A

Lockman, Z

Qi, X

MacManus-Driscoll, JL

Bugoslavsky, Y

Cohen, LF

Jo, MH

Stelmashenko, NA

Tsaneva, VN

Kambara, M

Babu, NH

Cardwell, DA

Blamire, MG

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2BP, England

[2] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2BZ, England

[3] Univ Cambridge, Irc Superconduct, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 24期

关键词：

D O I：

10.1063/1.1424070

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

MgB2 thin films were cold grown on sapphire substrates by pulsed laser deposition followed by postannealing in mixed, reducing gas, Mg rich, Zr gettered, environments (pO(2)similar to 10(-24) atm) at 750 and 950 degreesC. The films had T-c in the range 29-34 K, J(c) (20 K, H=0) in the range 3x10(4)-3x10(5) A cm(-2), and irreversibility fields H-* at 20 K of 4-6.2 T. An inverse correlation was found between T-c and H-*. The films had grain sizes of similar to0.1-1 mum and a strong biaxial alignment was observed in the 950 degreesC annealed film. (111) oriented MgO was also observed. Mg coating of films during crystallization appeared to improve film T-c. (C) 2001 American Institute of Physics.

引用

页码：4001 / 4003

页数：3

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