Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells

被引：53

作者：

Du, Weijie ^{[1
]}

Suzuno, Mitsushi ^{[1
]}

Khan, M. Ajmal ^{[1
]}

Toh, Katsuaki ^{[1
]}

Baba, Masakazu ^{[1
]}

Nakamura, Kotaro ^{[1
]}

Toko, Kaoru ^{[1
]}

Usami, Noritaka ^{[2
,3
]}

Suemasu, Takashi ^{[1
,3
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020075, Japan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 15期

基金：

日本科学技术振兴机构;

关键词：

CRYSTAL-STRUCTURE; SB; DIFFUSION; SILICIDES; GAP;

D O I：

10.1063/1.3703585

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The highest photoresponsivity and an internal quantum efficiency exceeding 70% at 1.55 eV were achieved for 400 nm thick undoped n-type BaSi2 epitaxial layers formed on a n(+)-BaSi2/p(+)-Si tunnel junction (TJ) on Si(111). The diffusion of Sb atoms was effectively suppressed by an intermediate polycrystalline Si layer grown by solid phase epitaxy, located between the TJ and undoped BaSi2 layers. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3703585]

引用

页数：3

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