Band gap engineering of ZnO thin films by In2O3 incorporation

被引：74

作者：

Gupta, R. K. ^{[1
]}

Ghosh, K. ^{[1
]}

Patel, R. ^{[2
]}

Mishra, S. R. ^{[3
]}

Kahol, P. K. ^{[1
]}

机构：

[1] Missouri State Univ, Dept Phys Astron & Mat Sci, Springfield, MO 65897 USA

[2] Missouri State Univ, Roy Blunt Jordan Valley Innovat Ctr, Springfield, MO 65806 USA

[3] Univ Memphis, Dept Phys, Memphis, TN 38152 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 12期

关键词：

Hall effect; mobility; zinc oxide; indium oxide; pulsed laser deposition; transparent electrode;

D O I：

10.1016/j.jcrysgro.2008.03.004

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Highly transparent and conducting thin films of ZnO-In2O3 were deposited using pulsed laser deposition (PLD) technique. The effect of composition and growth temperature on structural, electrical, and optical properties was studied. The lowest resistivity of 2.11 x 10(-4) Omega cm and high transparency (similar to 80%) was obtained for the film having 5% In2O3 in ZnO. The band gap of the films depends on doping level and varies from 3.37 to 3.95 eV. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：3019 / 3023

页数：5

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