On the origin of surface outgrowths in pulsed-laser-deposited YBCO/CeO2/Al2O3 thin films

被引：27

作者：

Develos, KD ^{[1
]}

Yamasaki, H ^{[1
]}

Sawa, A ^{[1
]}

Nakagawa, Y ^{[1
]}

机构：

[1] Natl Ist Adv Ind Sci & Technol, AIST Tsukuba Cent 2, Energy Elect Inst, Supercond Technol Grp, Tsukuba, Ibaraki 3058568, Japan

来源：

PHYSICA C | 2001年 / 361卷 / 02期

关键词：

YBCO; CeO2; sapphire; interfacial reaction; outgrowth;

D O I：

10.1016/S0921-4534(01)00297-0

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Superconducting epitaxial YBa2Cu3O7-delta (YBCO) films were grown by pulsed laser deposition on CeO2-buffered sapphire (Al2O3) substrates. Scanning transmission electron microscopy and energy dispersive X-ray spectrometry investigations of the outgrowths found in YBCO films revealed these to be comprised of a multiphase microstructure, emanating from interfacial reactions of YBCO with the CeO2 film and the Al2O3 substrate. The surface outgrowths are mostly composed of CuO and YCuO2 phases which have segregated at the top of BaCeO3, a product of the interfacial reaction of YBCO with CeO2. Cross-sectional transmission electron microscopy observations further revealed a BaAl2O4 phase formed beneath the BaCeO3 phase, including along the CeO2-Al2O3 interface. Despite the presence of these outgrowths, high critical current density J(c) values > 2.0 x 10(6) A/cm(2) were obtained. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：121 / 129

页数：9

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