InP-based Quantum Cascade Lasers Monolithically Integrated onto Si and GaAs Substrates

被引：0

作者：

Go, R. ^{[1
,2
]}

Krysiak, H. ^{[3
]}

Fetters, M. ^{[3
]}

Figueiredo, P. ^{[1
]}

Suttinger, M. ^{[1
,2
]}

Leshin, J. ^{[1
,2
]}

Fang, X. M. ^{[3
]}

Fastenau, J. M. ^{[3
]}

Lubyshev, D. ^{[3
]}

Liu, A. W. K. ^{[3
]}

Eisenbach, A. ^{[3
]}

Furlong, M. J. ^{[4
]}

Lyakh, A. ^{[1
,2
,5
]}

机构：

[1] Univ Cent Florida, NanoSci Technol Ctr, 12424 Res Pkwy, Orlando, FL 32826 USA

[2] Univ Cent Florida, Coll Opt & Photon, 4304 Scorpius St, Orlando, FL 32816 USA

[3] IQE IR, 119 Technol Dr, Bethlehem, PA USA

[4] IQE IR, Cypress Dr, Cardiff CF3 0LW, Wales

[5] Univ Cent Florida, Dept Phys, 4111 Libra Dr, Orlando, FL 32816 USA

来源：

2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2018年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Operation of InP-based quantum cascade lasers (QCL) processed from structures grown on 6-inch Si and GaAs substrates with metamorphic buffers are reported. Results pave the way for the development of ultra-compact Si -based platforms comprising QCLs.

引用

页数：2

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