Effect of 60Co γ-ray irradiation on electrical properties of GaAs epilayer and GaAs p-i-n diode

被引：23

作者：

Khamari, Shailesh K. ^{[1
]}

Dixit, V. K. ^{[1
]}

Ganguli, Tapas ^{[1
]}

Porwal, S. ^{[1
]}

Singh, S. D. ^{[1
]}

Kher, Sanjay ^{[2
]}

Sharma, R. K. ^{[2
]}

Oak, S. M. ^{[1
]}

机构：

[1] Raja Ramanna Ctr Adv Technol, Solid State Laser Div, Semicond Laser Sect, Indore, Madhya Pradesh, India

[2] Raja Ramanna Ctr Adv Technol, Solid State Laser Div, Fiber Opt Lab, Indore, Madhya Pradesh, India

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2011年 / 269卷 / 03期

关键词：

Epilayers; p-i-n diode; gamma-Irradiation; ECV; RADIATION-DAMAGE; SEMIINSULATING GAAS; SILICON DETECTORS; NEUTRON; SEMICONDUCTORS; PERFORMANCE; HARDNESS; DEFECTS;

D O I：

10.1016/j.nimb.2010.11.067

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

GaAs epilayers and p-i-n diodes structures grown using metal-organic vapor phase epitaxy were irradiated at room temperatures by Co-60 gamma-ray radiation with varying the dose up to 50 kGy. The carrier concentration and mobility on GaAs epilayer decreases while leakage current of p-i-n diode increases at higher radiation dose (10-50 kGy). However at lower dose (<6 kGy) carrier mobility remain same but leakage current still shows significant increase. Furthermore carrier mobility of irradiated GaAs epilayers recovers partially (68%) after annealing at 300 degrees C while leakage current of p-i-n diode does not show any noticeable recovery. These effects are mainly due to the creation of more deep levels compared to shallow levels as determined from photoluminescence, Hall, current-voltage and electrochemical capacitance voltage analysis. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：272 / 276

页数：5

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