FeN/AlN multilayer films for high moment thin film recording heads

被引：9

作者：

Sin, K ^{[1
]}

Wang, SX ^{[1
]}

机构：

[1] STANFORD UNIV, DEPT ELECT ENGN, STANFORD, CA 94305 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1996年 / 32卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/20.538673

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Soft magnetic FeN films (H-c<1 Oe) on Al2O3-TiC and Si substrates were obtained by lamination with thin AlN interlayers. These laminated films exhibit significantly different magnetic properties when grown on Al2O3-TiC substrates compared with those on silicon substrates. Vacuum-annealing at 300 degrees C decreases H-c of the films on Al2O3-TiC samples whereas it increases H-c of the films on Si substrates. These results are correlated with the variation of the gamma'-Fe4N phase in the films.

引用

收藏

页码：3509 / 3511

页数：3

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