Tunable ring resonators for silicon Raman laser and amplifier applications

被引：6

作者：

Doylend, J. K. ^{[1
]}

Cohen, O. ^{[2
]}

Lee, M. R. ^{[1
]}

Raday, O. ^{[2
]}

Xu, S. ^{[1
]}

Sih, V. ^{[1
]}

Rong, H. ^{[1
]}

Paniccia, M. ^{[1
]}

机构：

[1] Intel Corp, 2200 Mission Coll Blvd, Santa Clara, CA 95054 USA

[2] Intel Corp, IL-91031 Jerusalem, Israel

来源：

INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES XII | 2008年 / 6896卷

关键词：

silicon photonics; Raman laser; Raman amplifier; tunable ring resonator;

D O I：

10.1117/12.767867

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recently, low threshold Raman silicon lasers based on ring resonator architecture have been demonstrated. One of the key elements of the laser cavity is the directional coupler that couples both pump and signal light in and out of the ring resonator from the bus waveguide. The coupling coefficients are crucial for achieving desired laser performance. In this paper, we report design, fabrication, and characterization of tunable silicon ring resonators for Raman laser and amplifier applications. By employing a tunable coupler, the coupling coefficients for both pump and signal wavelength can be tailored to their optimal values after the fabrication, which significantly increases the processing tolerance and improves the device performance.

引用

页数：9

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