Room Temperature Ferromagnetism in Cu-Doped In 2O3 Thin Films

被引：9

作者：

Krishna, N. Sai ^{[1
]}

Kaleemulla, S. ^{[1
]}

Amarendra, G. ^{[2
,3
]}

Rao, N. Madhusudhana ^{[1
]}

Krishnamoorthi, C. ^{[1
]}

Begam, M. Rigana ^{[1
]}

Omkaram, I. ^{[4
]}

Reddy, D. Sreekantha ^{[5
,6
]}

机构：

[1] VIT Univ, Sch Adv Sci, Thin Films Lab, Vellore 632014, Tamil Nadu, India

[2] Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India

[3] UGC DAE CSR, Kokilamedu 603104, Tamil Nadu, India

[4] Kyung Hee Univ, Dept Elect & Radio Engn, Yongin 446701, Gyeonggi Do, South Korea

[5] Sungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea

[6] Sungkyunkwan Univ, Sungkyunkwan Adv Inst Nanotechnol, Suwon 440746, South Korea

来源：

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2015年 / 28卷 / 07期

关键词：

Copper-doped indium oxide; Thin films; Dilute magnetic semiconductor; XPS; MAGNETIC-PROPERTIES; OPTICAL-PROPERTIES; INDIUM OXIDE; IN2O3; SEMICONDUCTORS; (IN1-XFEX)(2)O3-SIGMA; SNO2;

D O I：

10.1007/s10948-015-2988-7

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The In Cu2-x O-x (3) (x = 0, 0.03, 0.05, and 0.07) thin films were deposited on a glass substrate under vacuum by electron beam evaporation technique. The influence of Cu concentration on the structural, chemical, and magnetic properties of In Cu2-x O-x (3) was studied. The Cu concentration did not influence the host crystal structure; however, it does increase the oxygen vacancies and ferromagnetic strength in the In Cu2-x O-x (3) system with Cu concentration. X-ray photoelectron spectroscopy revealed the dopant Cu has a Cu(II) state in the In O-2 (3) host. The observed ferromagnetism in In Cu2-x O-x (3) is similar to the higher oxidation semiconductors (Sn Cu1-x O-x (2) and Ti Cu1-x O-x (2)) and is contrary to the lower oxidation semiconductor (Zn Cu1-x O-x). Such a ferromagnetism is attributed to the intrinsic nature of the sample rather than any secondary magnetic phases existing in the films. The observed ferromagnetism in In Cu2-x O-x (3) was attributed to the ferromagnetic exchange interaction between Cu (2+) ions via single free electron trapped oxygen vacancy. Increase in oxygen vacancies with Cu concentration leads to increase in such oxygen vacancy-mediated ferromagnetic pairs, resulting in increase in ferromagnetic strength with Cu concentration. However, if we increase Cu concentration above a critical level, Cu-O-Cu interaction leads to an antiferromagnetic nature.

引用

页码：2089 / 2095

页数：7

共 34 条

[1] Vacancy-induced room-temperature ferromagnetism in Ga-TiO2 [J].

Bao, N. N. ;

Yi, J. B. ;

Fan, H. M. ;

Qin, X. B. ;

Zhang, P. ;

Wang, B. Y. ;

Ding, J. ;

Li, S. .

SCRIPTA MATERIALIA, 2012, 66 (10) :821-824

[2] Room-temperature ferromagnetism in Cu-doped ZnO thin films [J].

Buchholz, DB ;

Chang, RPH ;

Song, JH ;

Ketterson, JB .

APPLIED PHYSICS LETTERS, 2005, 87 (08)

[3] Room temperature ferromagnetism in Zn1-xCuxO thin films [J].

Chakraborti, D. ;

Narayan, J. ;

Prater, J. T. .

APPLIED PHYSICS LETTERS, 2007, 90 (06)

[4] Magnetism in hafnium dioxide [J].

Coey, JMD ;

Venkatesan, M ;

Stamenov, P ;

Fitzgerald, CB ;

Dorneles, LS .

PHYSICAL REVIEW B, 2005, 72 (02)

[5] Donor impurity band exchange in dilute ferromagnetic oxides [J].

Coey, JMD ;

Venkatesan, M ;

Fitzgerald, CB .

NATURE MATERIALS, 2005, 4 (02) :173-179

[6] Ferromagnetism in Fe-doped SnO2 thin films [J].

Coey, JMD ;

Douvalis, AP ;

Fitzgerald, CB ;

Venkatesan, M .

APPLIED PHYSICS LETTERS, 2004, 84 (08) :1332-1334

[7] Structural, electrical and magnetic studies of Co:SnO2 and (Co,Mo):SnO2 films prepared by pulsed laser deposition [J].

Dalui, S. ;

Rout, S. ;

Silvestre, A. J. ;

Lavareda, G. ;

Pereira, L. C. J. ;

Brogueira, P. ;

Conde, O. .

APPLIED SURFACE SCIENCE, 2013, 278 :127-131

[8] Appearance of room-temperature ferromagnetism in Cu-doped TiO2-δ films -: art. no. 161313 [J].

Duhalde, S ;

Vignolo, MF ;

Golmar, F ;

Chiliotte, C ;

Torres, CER ;

Errico, LA ;

Cabrera, AF ;

Rentería, M ;

Sánchez, FH ;

Weissmann, M .

PHYSICAL REVIEW B, 2005, 72 (16)

[9] Room temperature ferromagnetic multilayer thin film based on indium oxide and iron oxide for transparent spintronic applications [J].

Gupta, R. K. ;

Ghosh, K. ;

Kahol, P. K. .

MATERIALS LETTERS, 2010, 64 (18) :2022-2024

[10] Room temperature ferromagnetic n-type semiconductor in (In1-xFex)2O3-σ -: art. no. 052503 [J].

He, J ;

Xu, SF ;

Yoo, YK ;

Xue, QZ ;

Lee, HC ;

Cheng, SF ;

Xiang, XD ;

Dionne, GF ;

Takeuchi, I .

APPLIED PHYSICS LETTERS, 2005, 86 (05) :1-3

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