Thermopower of composite fermions in the fractional quantum Hall effect regime

被引：0

作者：

Karavolas, VC ^{[1
]}

Triberis, GP ^{[1
]}

机构：

[1] Univ Athens, Dept Phys, Solid State Sect, GR-15784 Athens, Greece

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 101卷 / 1-3期

关键词：

transport; strong magnetic fields; GaAs/AlGaAs heterostructures;

D O I：

10.1016/S0921-5107(02)00734-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thermopower is calculated for a two-dimensional electron and hole gas at low temperatures in the fractional quantum Hall effect (FQHE) regime around filling factors v = k +/- 1/2m, 2m being the number of flux quanta attached to each carrier in the composite fermion (CF) picture. The general expressions obtained are applied to the v = 3/2 (k = 1, 2m = 2 and k = 2, 2m = 2) cases. The analysis shows the effect of the Landau level broadening on the diagonal component of the system thermopower. The deviation from the expected symmetry in the diagonal component of the system thermopower is investigated. The analysis allows the evaluation of the system thermopower at v = 1/2 to v = 9/4. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：329 / 333

页数：5

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