Microwave irradiation effects on random telegraph signal in a MOSFET

被引：22
作者：
Prati, Enrico
Fanciulli, Marco
Calderoni, Alessandro
Ferrari, Giorgio
Sampietro, Marco
机构：
[1] CNR, Lab Nazl Mat & Disposit Microelettron, Ist Nazl Fis Mat, I-20041 Agrate Brianza, Italy
[2] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
来源：
PHYSICS LETTERS A | 2007年 / 370卷 / 5-6期
关键词：
D O I：
10.1016/j.physleta.2007.05.086
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report on the change of the characteristic times of the random telegraph signal (RTS) in a MOSFET operated under microwave irradiation up to 40 GHz as the microwave field power is raised. The effect is explained by considering the time dependency of the transition probabilities due to a harmonic voltage generated by the microwave field that couples with the wires connecting the MOSFET. The RTS experimental data are in agreement with the prediction obtained with our model. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：491 / 493
页数：3
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