Optical links on silicon photonic chips using ultralow-power consumption photonic-crystal lasers

被引:10
作者
Takeda, Koji [1 ,2 ]
Tsurugaya, Takuma [1 ]
Fujii, Takuro [1 ,2 ]
Shinya, Akihiko [2 ,3 ]
Maeda, Yoshiho [1 ]
Tsuchizawa, Tai [1 ,2 ]
Nishi, Hidetaka [1 ,2 ]
Notomi, Masaya [2 ,3 ]
Kakitsuka, Takaaki [1 ,2 ,4 ]
Matsuo, Shinji [1 ,2 ]
机构
[1] NTT Corp, NTT Device Technol Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan
[2] NTT Corp, Nanophoton Ctr, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan
[3] NTT Corp, NTT Basic Res Labs, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 2430198, Japan
[4] Waseda Univ, Grad Sch Informat Prod & Syst, Wakamatsu Ku, 2-7 Hibikino, Kitakyushu, Fukuoka 8080135, Japan
关键词
22;
D O I
10.1364/OE.427843
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Ultrashort-distance optical interconnects are becoming increasingly important due to continuous improvements in servers and high-performance computers. As light sources in such interconnects, directly modulated semiconductor lasers with an ultrasmall active region are promising. In addition, using Si waveguides is important to provide low loss optical links with functions such as wavelength filtering and switching. In this paper, we demonstrate a wafer-scale heterogeneous integration of lambda-scale embedded active-region photonic-crystal (LEAP) lasers and Si waveguides, achieved through precise alignment. We numerically and experimentally demonstrated the coupling design between the LEAP lasers and Si waveguides; it is important to match propagation constants of Si waveguides and wavenumber of the optical cavity modes. The LEAP lasers exhibit an ultralow threshold current of 13.2-mu A and 10-Gbit/s direct modulation. We also achieved the first data transmission using an optical link consisting of a LEAP laser, Si waveguide, and photodetector and obtained an averaged eye diagram at a bit rate of 10 Gbit/s with a bias current of 150 mu A. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:26082 / 26092
页数:11
相关论文
共 22 条
  • [1] Silicon Photonics for Next Generation System Integration Platform
    Arakawa, Yasuhiko
    Nakamura, Takahiro
    Urino, Yutaka
    Fujita, Tomoyuki
    [J]. IEEE COMMUNICATIONS MAGAZINE, 2013, 51 (03) : 72 - 77
  • [2] High-power, high-linearity photodiodes
    Beling, Andreas
    Xie, Xiaojun
    Campbell, Joe C.
    [J]. OPTICA, 2016, 3 (03): : 328 - 338
  • [3] Benner A, 2012, 2012 OPT FIB COMM C 2012 OPT FIB COMM C
  • [4] ON THE LINEWIDTH OF MICROCAVITY LASERS
    BJORK, G
    KARLSSON, A
    YAMAMOTO, Y
    [J]. APPLIED PHYSICS LETTERS, 1992, 60 (03) : 304 - 306
  • [5] Crosnier G, 2017, NAT PHOTONICS, V11, P297, DOI [10.1038/NPHOTON.2017.56, 10.1038/nphoton.2017.56]
  • [6] Ellis B, 2011, NAT PHOTONICS, V5, P297, DOI [10.1038/nphoton.2011.51, 10.1038/NPHOTON.2011.51]
  • [7] Electrically pumped hybrid AlGaInAs-silicon evanescent laser
    Fang, Alexander W.
    Park, Hyundai
    Cohen, Oded
    Jones, Richard
    Paniccia, Mario J.
    Bowers, John E.
    [J]. OPTICS EXPRESS, 2006, 14 (20) : 9203 - 9210
  • [8] Hybrid III-V semiconductor/silicon nanolaser
    Halioua, Y.
    Bazin, A.
    Monnier, P.
    Karle, T. J.
    Roelkens, G.
    Sagnes, I.
    Raj, R.
    Raineri, F.
    [J]. OPTICS EXPRESS, 2011, 19 (10): : 9221 - 9231
  • [9] Lateral current injection photonic crystal membrane light emitting diodes
    Long, Christopher M.
    Giannopoulos, Antonios V.
    Choquette, Kent D.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (02): : 359 - 364
  • [10] Matsuo S., 2012, 2012 OPT FIB COMM C 2012 OPT FIB COMM C