High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells

被引：0

作者：

Kovsh, AR ^{[1
]}

Zhukov, AE ^{[1
]}

Maleev, NA ^{[1
]}

Mikhrin, SS ^{[1
]}

Vasil'ev, AV ^{[1
]}

Shernyakov, YM ^{[1
]}

Livshits, DA ^{[1
]}

Maximov, MV ^{[1
]}

Sizov, DS ^{[1
]}

Kryzhanovskaya, NV ^{[1
]}

Pikhtin, NA ^{[1
]}

Kapitonov, VA ^{[1
]}

Tarasov, IS ^{[1
]}

Ledentsov, NN ^{[1
]}

Ustinov, VM ^{[1
]}

Wang, JS ^{[1
]}

Wei, L ^{[1
]}

Lin, G ^{[1
]}

Chi, JY ^{[1
]}

机构：

[1] Ioffe Phys Tech Inst, St Petersburg, Russia

来源：

10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY | 2003年 / 5023卷

关键词：

semiconductor quantum dots; diode lasers; molecular beam epitaxy;

D O I：

10.1117/12.514262

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：353 / 356

页数：4

共 8 条

[1] 10.9W continuous wave optical power from 100μm aperture InGaAs/AlGaAs (915nm) laser diodes
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[3] Krestnikov IL, 2001, PHYS STATUS SOLIDI A, V183, P207, DOI 10.1002/1521-396X(200102)183:2<207::AID-PSSA207>3.0.CO
[4] 2-2
[5] Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
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[J]. ELECTRONICS LETTERS, 1999, 35 (14) : 1163 - 1165
[6] Improved catastrophic optical mirror damage level in InGaAs/AlGaAs laser diodes
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[7] 0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots
Mikhrin, SS
Zhukov, AE
Kovsh, AR
Maleev, NA
Ustinov, VM
Shernyakov, YM
Soshnikov, IP
Livshits, DA
Tarasov, IS
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[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (11) : 1061 - 1064
[8] VERTICALLY SELF-ORGANIZED INAS QUANTUM BOX ISLANDS ON GAAS(100)
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CHEN, P
KOBAYASHI, NP
[J]. PHYSICAL REVIEW LETTERS, 1995, 75 (13) : 2542 - 2545

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