Influence of polymer gate dielectrics on n-channel conduction of pentacene-based organic field-effect transistors

被引:22
作者
Guo, Tzung-Fang [1 ]
Tsai, Zen-Jay
Chen, Shi-Yu
Wen, Ten-Chin
Chung, Chia-Tin
机构
[1] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 701, Taiwan
关键词
This work elucidates the way polymer gate dielectrics affect the accumulation and transport of charge carriers in the active layer of organic field-effect transistors (OFETs). Incorporating a poly(vinyl alcohol) polymer interfacial film and another cross-linked poly(4-vinyl phenol) layer as a double-layer gate dielectric causes the pentacene-based OFETs to exhibit effective n -channel conduction of a saturated; apparent pinch-off drain-source current with the electron mobility of ∼0.012 cm2 V-1 s-1. The formation of an n channel in the pentacene layer is supported by the increased capacitance that is identified by the quasistatic capacitance-voltage measurements of devices with the metal-insulator-semiconductor configuration; biased at a positive gate voltage; in the n -type accumulation regime. © 2007 American Institute of Physics;
D O I
10.1063/1.2748869
中图分类号
O59 [应用物理学];
学科分类号
摘要
This work elucidates the way polymer gate dielectrics affect the accumulation and transport of charge carriers in the active layer of organic field-effect transistors (OFETs). Incorporating a poly(vinyl alcohol) polymer interfacial film and another cross-linked poly(4-vinyl phenol) layer as a double-layer gate dielectric causes the pentacene-based OFETs to exhibit effective n-channel conduction of a saturated, apparent pinch-off drain-source current with the electron mobility of similar to 0.012 cm(2) V-1 s(-1). The formation of an n channel in the pentacene layer is supported by the increased capacitance that is identified by the quasistatic capacitance-voltage measurements of devices with the metal-insulator-semiconductor configuration, biased at a positive gate voltage, in the n-type accumulation regime. (c) 2007 American Institute of Physics.
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页数:4
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