GaN-Based Multiquantum Well Light-Emitting Diodes With Tunnel-Junction-Cascaded Active Regions

被引：30

作者：

Chang, Shoou-Jinn ^{[1
]}

Lin, Wei-Heng ^{[1
]}

Yu, Chun-Ta ^{[2
]}

机构：

[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

[2] Epistar Corp, Tainan 74147, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 04期

关键词：

GaN; LEDs; tunnel junction; droop; EMISSION;

D O I：

10.1109/LED.2015.2397597

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the fabrication of GaN-based multiquantum well light-emitting diode (LED) with tunnel-junction (TJ)-cascaded active region. It was found from X-ray diffraction spectra that crystal quality of the TJ LED was almost identical to that of the conventional LED. Compared with the conventional LED, it was found that we could achieve 35% higher output power from the TJ LED due to the repeated use of electrons and holes for photon generation. It was also found that the external quantum efficiency drooped by 26.3% and 18.7% for the TJ LED and the conventional LED, respectively, as we increased the injection current density to 80 A/cm(2). Furthermore, it was found that forward voltages measured with an injection current density of 20 A/cm(2) were 8.94 V for the TJ LED. The large forward voltage observed from the TJ LED should be attributed to the large TJ resistance.

引用

页码：366 / 368

页数：3

共 18 条

[1] Tunneling-based carrier regeneration in cascaded GaN light emitting diodes to overcome efficiency droop [J].

Akyol, Fatih ;

Krishnamoorthy, Sriram ;

Rajan, Siddharth .

APPLIED PHYSICS LETTERS, 2013, 103 (08)

[2] On the origin of efficiency roll-off in InGaN-based light-emitting diodes [J].

Cao, X. A. ;

Yang, Y. ;

Guo, H. .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (09)

[3] Nitride-based cascade near white light-emitting diodes [J].

Chen, CH ;

Chang, SJ ;

Su, YK ;

Sheu, JK ;

Chen, JF ;

Kuo, CH ;

Lin, YC .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (07) :908-910

[4] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 69 (27) :4188-4190

[5] Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates [J].

Chiu, Ching-Hsueh ;

Lin, Da-Wei ;

Lin, Chien-Chung ;

Li, Zhen-Yu ;

Chang, Wei-Ting ;

Hsu, Hung-Wen ;

Kuo, Hao-Chung ;

Lu, Tien-Chang ;

Wang, Shing-Chung ;

Liao, Wei-Tsai ;

Tanikawa, Tomoyuki ;

Honda, Yoshio ;

Yamaguchi, Masahito ;

Sawaki, Nobuhiko .

APPLIED PHYSICS EXPRESS, 2011, 4 (01)

[6] Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes [J].

David, Aurelien ;

Grundmann, Michael J. ;

Kaeding, John F. ;

Gardner, Nathan F. ;

Mihopoulos, Theodoros G. ;

Krames, Michael R. .

APPLIED PHYSICS LETTERS, 2008, 92 (05)

[7] Blue-emitting InGaN-GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200 A/cm2 [J].

Gardner, N. F. ;

Mueller, G. O. ;

Shen, Y. C. ;

Chen, G. ;

Watanabe, S. ;

Gotz, W. ;

Krames, M. R. .

APPLIED PHYSICS LETTERS, 2007, 91 (24)

[8] GaInN-Based Tunnel Junctions in n-p-n Light Emitting Diodes [J].

Kaga, Mitsuru ;

Morita, Takatoshi ;

Kuwano, Yuka ;

Yamashita, Kouji ;

Yagi, Kouta ;

Iwaya, Motoaki ;

Takeuchi, Tetsuya ;

Kamiyama, Satoshi ;

Akasaki, Isamu .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)

[9] White light emission of monolithic carbon-implanted InGaN-GaN light-emitting diodes [J].

Lee, Ching-Ting ;

Yang, Ue-Zhi ;

Lee, Chi-Sen ;

Chen, Pou-Sung .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (17-20) :2029-2031

[10] Light Extraction Enhancement of GaN-Based Flip-Chip Light-Emitting Diodes Using Diffused Nanorod Reflector [J].

Lee, Ching-Ting ;

Chuang, Chia-Yin .

APPLIED PHYSICS EXPRESS, 2012, 5 (11)

← 1 2 →