Two-dimensional materials for next-generation computing technologies

被引:808
作者
Liu, Chunsen [1 ,2 ]
Chen, Huawei [1 ]
Wang, Shuiyuan [1 ]
Liu, Qi [3 ,4 ]
Jiang, Yu-Gang [2 ]
Zhang, David Wei [1 ]
Liu, Ming [3 ,4 ]
Zhou, Peng [1 ]
机构
[1] Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai, Peoples R China
[2] Fudan Univ, Sch Comp Sci, Shanghai, Peoples R China
[3] Fudan Univ, Frontier Inst Chip & Syst, Shanghai, Peoples R China
[4] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing, Peoples R China
基金
中国国家自然科学基金;
关键词
FIELD-EFFECT TRANSISTORS; GRAPHENE TRANSISTORS; MOS2; TRANSISTORS; MEMORY; SEMICONDUCTOR; TRANSPORT; SYNAPSES; CONTACTS; DEVICE; MEMTRANSISTORS;
D O I
10.1038/s41565-020-0724-3
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Rapid digital technology advancement has resulted in a tremendous increase in computing tasks imposing stringent energy efficiency and area efficiency requirements on next-generation computing. To meet the growing data-driven demand, in-memory computing and transistor-based computing have emerged as potent technologies for the implementation of matrix and logic computing. However, to fulfil the future computing requirements new materials are urgently needed to complement the existing Si complementary metal-oxide-semiconductor technology and new technologies must be developed to enable further diversification of electronics and their applications. The abundance and rich variety of electronic properties of two-dimensional materials have endowed them with the potential to enhance computing energy efficiency while enabling continued device downscaling to a feature size below 5 nm. In this Review, from the perspective of matrix and logic computing, we discuss the opportunities, progress and challenges of integrating two-dimensional materials with in-memory computing and transistor-based computing technologies. This Review discusses the recent progress and future prospects of two-dimensional materials for next-generation nanoelectronics.
引用
收藏
页码:545 / 557
页数:13
相关论文
共 139 条
[1]   Electrical contacts to two-dimensional semiconductors [J].
Allain, Adrien ;
Kang, Jiahao ;
Banerjee, Kaustav ;
Kis, Andras .
NATURE MATERIALS, 2015, 14 (12) :1195-1205
[2]   Equivalent-accuracy accelerated neural-network training using analogue memory [J].
Ambrogio, Stefano ;
Narayanan, Pritish ;
Tsai, Hsinyu ;
Shelby, Robert M. ;
Boybat, Irem ;
di Nolfo, Carmelo ;
Sidler, Severin ;
Giordano, Massimo ;
Bodini, Martina ;
Farinha, Nathan C. P. ;
Killeen, Benjamin ;
Cheng, Christina ;
Jaoudi, Yassine ;
Burr, Geoffrey W. .
NATURE, 2018, 558 (7708) :60-+
[3]  
Amir A, 2016, 2016 FIRST IEEE INTERNATIONAL CONFERENCE ON COMPUTER COMMUNICATION AND THE INTERNET (ICCCI 2016), P10, DOI 10.1109/CCI.2016.7778867
[4]   Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors [J].
Avsar, Ahmet ;
Vera-Marun, Ivan J. ;
Tan, Jun You ;
Watanabe, Kenji ;
Taniguchi, Takashi ;
Castro Neto, Antonio H. ;
Oezyilmaz, Barbaros .
ACS NANO, 2015, 9 (04) :4138-4145
[5]   Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper [J].
Banszerus, Luca ;
Schmitz, Michael ;
Engels, Stephan ;
Dauber, Jan ;
Oellers, Martin ;
Haupt, Federica ;
Watanabe, Kenji ;
Taniguchi, Takashi ;
Beschoten, Bernd ;
Stampfer, Christoph .
SCIENCE ADVANCES, 2015, 1 (06)
[6]  
Bessonov AA, 2015, NAT MATER, V14, P199, DOI [10.1038/NMAT4135, 10.1038/nmat4135]
[7]   'Memristive' switches enable 'stateful' logic operations via material implication [J].
Borghetti, Julien ;
Snider, Gregory S. ;
Kuekes, Philip J. ;
Yang, J. Joshua ;
Stewart, Duncan R. ;
Williams, R. Stanley .
NATURE, 2010, 464 (7290) :873-876
[8]   Learning through ferroelectric domain dynamics in solid-state synapses [J].
Boyn, Soeren ;
Grollier, Julie ;
Lecerf, Gwendal ;
Xu, Bin ;
Locatelli, Nicolas ;
Fusil, Stephane ;
Girod, Stephanie ;
Carretero, Cecile ;
Garcia, Karin ;
Xavier, Stephane ;
Tomas, Jean ;
Bellaiche, Laurent ;
Bibes, Manuel ;
Barthelemy, Agnes ;
Saighi, Sylvain ;
Garcia, Vincent .
NATURE COMMUNICATIONS, 2017, 8
[9]   Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element [J].
Burr, Geoffrey W. ;
Shelby, Robert M. ;
Sidler, Severin ;
di Nolfo, Carmelo ;
Jang, Junwoo ;
Boybat, Irem ;
Shenoy, Rohit S. ;
Narayanan, Pritish ;
Virwani, Kumar ;
Giacometti, Emanuele U. ;
Kuerdi, Bulent N. ;
Hwang, Hyunsang .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (11) :3498-3507
[10]   Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets [J].
Cheng, Peifu ;
Sun, Kai ;
Hu, Yun Hang .
NANO LETTERS, 2016, 16 (01) :572-576