Emission properties of single CdSe/ZnS quantum dots close to a dielectric interface

被引：42
作者：
Brokmann, X
Coolen, L
Hermier, JP
Dahan, M
机构：
[1] Univ Paris 06, Ecole Normale Super, CNRS, UMR 8552,Lab Kastler Brossel, F-75231 Paris, France
[2] Univ Paris 07, Lab Mat & Phenomenes Quant, F-75251 Paris, France
来源：
CHEMICAL PHYSICS | 2005年 / 318卷 / 1-2期
关键词：
semiconductor quantum dot; radiative lifetime; fluorescence emission; dielectric interface; radiation pattern;
D O I：
10.1016/j.chemphys.2005.06.032
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We study the effect of a dielectric interface on the emission of individual semiconductor quantum dots (QDs). By means of a simple experimental method, a single nanoparticle can be placed successively close and far from an interface, enabling a direct comparison of its fluorescence properties in both cases. We analyze the modifications of both the radiation pattern and the radiative lifetime of individual QDs by a glass-air interface. We discuss the role of their degenerate two-dimensional dipole in the emission pattern and show how a simple dielectric interface can affect the collection efficiency. Finally, we present a simple method to determine the quantum efficiency of the emitting state at the single molecule level. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：91 / 98
页数：8
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