Overlay Measurement Accuracy Enhancement by Design and Algorithm

被引:3
作者
Lee, Honggoo [1 ]
Lee, Byongseog [1 ]
Han, Sangjun [1 ]
Kim, Myoungsoo [1 ]
Kwon, Wontaik [1 ]
Park, Sungki [1 ]
Choi, DongSub [2 ]
Lee, Dohwa [2 ]
Jeon, Sanghuck [2 ]
Lee, Kangsan [2 ]
Itzkovich, Tal [3 ]
Amir, Nuriel [3 ]
Volkovich, Roie [3 ]
Herzel, Eitan [3 ]
Wagner, Mark [3 ]
El Kodadi, Mohamed [4 ]
机构
[1] SK Hynix, Bubal Eub, Icheonsi, South Korea
[2] KLA Tencor Korea, Hwasung City, South Korea
[3] KLA Tencor Israel, IL-23100 Migdal Haemeq, Israel
[4] KLA Tencor France, F-38240 Meylan, France
来源
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXIX | 2015年 / 9424卷
关键词
Overlay; Scatterometry; TMU; process robustness; Accuracy; matching to device;
D O I
10.1117/12.2085272
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Advanced design nodes require more complex lithography techniques, such as double patterning, as well as advanced materials like hard masks. This poses new challenge for overlay metrology and process control. In this publication several step are taken to face these challenges. Accurate overlay metrology solutions are demonstrated for advanced memory devices.
引用
收藏
页数:4
相关论文
共 5 条
  • [1] Amit Eran, 2013, SPIE
  • [2] Cohen Guy, 2012, SPIE
  • [3] Hwang Chan, 2011, SPIE
  • [4] Kandel Daniel, 2012, SPIE, V8324-17
  • [5] Klein Dana, 2013, SPIE, V8681-87