AlGaAs capping effect on InAs quantum dots self-assembled on GaAs

被引：8
|
作者：
Song, H. Z. [1 ]
Tanaka, Y. [1 ]
Yamamoto, T. [1 ]
Yokoyama, N. [1 ,2 ]
Sugawara, M. [3 ]
Arakawa, Y. [4 ,5 ]
机构：
[1] Fujitsu Lab Ltd, Kanagawa 2430197, Japan
[2] Natl Inst Adv Ind Sci & Technol, Green Elect Collaborat Res Ctr, Tsukuba, Ibaraki 3058569, Japan
[3] QD Laser Inc, Kanagawa Ku, Kawasaki, Kanagawa 2100855, Japan
[4] Univ Tokyo, Inst Nanoquantum Informat Elect, Meguro Ku, Tokyo 1538094, Japan
[5] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538094, Japan
来源：
PHYSICS LETTERS A | 2011年 / 375卷 / 40期
关键词：
Quantum dot; Optoelectronics; Self-assembled; Molecular beam epitaxy; OPTICAL-PROPERTIES;
D O I：
10.1016/j.physleta.2011.08.021
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The effects of AlGaAs capping on InAs quantum dots self-assembled on GaAs are investigated. It is observed that, the photoluminescence intensity becomes stronger up to twice when Al is incorporated into the cap layer. In the mean time, the full width at half maximum of the photoluminescence spectrum becomes narrower, the peak splitting between the ground and first excited exciton levels becomes wider, and the photoluminescence peak wavelength becomes longer. With considerations of the increased barrier height and the changed microstructures of the quantum dots induced by AlGaAs capping, the mechanisms of the observed improvements are discussed. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：3517 / 3520
页数：4
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