Fermi-level pinning position at the Au-InAs interface determined using ballistic electron emission microscopy

被引：47
作者：
Bhargava, S
Blank, HR
Narayanamurti, V
Kroemer, H
机构：
[1] ECE Department, University of California, Santa Barbara
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 06期
关键词：
D O I：
10.1063/1.118271
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ballistic electron emission microscopy (BEEM) has been used to determine the Fermi-level pinning position at the Au/InAs interface. Using BEEM's three-terminal capabilities, collector current-voltage scans were taken on Au/InAs/AlSb samples. The extracted BEEM threshold values (1.22 eV) correspond to the highest energy band position in the conduction band at the InAs/AlSb interface. By subtracting the InAs/AlSb conduction-band offset (1.35 eV), an estimate of the Au Fermi-level position on InAs is obtained (0.13 eV). (C) 1997 American Institute of Physics.
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页码：759 / 761
页数：3
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