Fermi-level pinning position at the Au-InAs interface determined using ballistic electron emission microscopy

被引：48

作者：

Bhargava, S

Blank, HR

Narayanamurti, V

Kroemer, H

机构：

[1] ECE Department, University of California, Santa Barbara

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 06期

关键词：

D O I：

10.1063/1.118271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ballistic electron emission microscopy (BEEM) has been used to determine the Fermi-level pinning position at the Au/InAs interface. Using BEEM's three-terminal capabilities, collector current-voltage scans were taken on Au/InAs/AlSb samples. The extracted BEEM threshold values (1.22 eV) correspond to the highest energy band position in the conduction band at the InAs/AlSb interface. By subtracting the InAs/AlSb conduction-band offset (1.35 eV), an estimate of the Au Fermi-level position on InAs is obtained (0.13 eV). (C) 1997 American Institute of Physics.

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页码：759 / 761

页数：3

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