Improved Photovoltaic Effects of a Vertical-Type InGaN/GaN Multiple Quantum Well Solar Cell

被引：29

作者：

Bae, Si-Young ^{[1
]}

Shim, Jae-Phil ^{[1
]}

Lee, Dong-Seon ^{[1
]}

Jeon, Seoung-Ran ^{[2
]}

Namkoong, Gon ^{[3
]}

机构：

[1] Gwangju Inst Sci & Technol, Sch Informat & Commun, Kwangju 500712, South Korea

[2] Korea Photon Technol Inst, Kwangju 500779, South Korea

[3] Old Dominion Univ, Appl Res Ctr, Dept Elect & Comp Engn, Newport News, VA 23606 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 09期

基金：

美国国家科学基金会;

关键词：

LIGHT-EMITTING-DIODES; IN1-XGAXN ALLOYS; GAN SURFACE; BAND-GAP; EFFICIENCY; THICKNESS; EMISSION; LAYERS; HETEROSTRUCTURES; RECOMBINATION;

D O I：

10.1143/JJAP.50.092301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the photovoltaic performance of InGaN/GaN multiple quantum well (MQW) solar cells by comparing vertical-type and conventional lateral-type solar cells. We found that both bottom reflector and front surface texturing of vertical-type InGaN/GaN MQW solar cells enhanced light absorption by 45%, leading to an enhancement of the short circuit current density (J(SC)) by 1.6 times, compared to that of a lateral-type structure. For the vertical-type InGaN/GaN solar cell, Ag was used for bottom reflectors and pyramid textured surfaces were formed by KOH etching after a lift-off process, whereas lateral-type structures were fabricated on sapphire substrates having smooth surfaces. As a result, the vertical InGaN/GaN MQW solar cells showed a high fill factor of 80.0% and conversion efficiency of 2.3%; in contrast, the conventional lateral structure produced a fill factor of 77.6% and a conversion efficiency of 1.4%. (C) 2011 The Japan Society of Applied Physics

引用

页数：5

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