Epitaxial strain effects on the metal-insulator transition in V2O3 thin films

被引：49
|
作者：
Yonezawa, S [1 ]
Muraoka, Y [1 ]
Ueda, Y [1 ]
Hiroi, Z [1 ]
机构：
[1] Univ Tokyo, Inst Solid State Phys, Mat Design & Characterizat Lab, Kashiwa, Chiba 2778581, Japan
来源：
SOLID STATE COMMUNICATIONS | 2004年 / 129卷 / 04期
关键词：
thin film; epitaxy; Anderson localization; strain;
D O I：
10.1016/j.ssc.2003.10.024
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Effects of epitaxial stress on the metal-insulator transition of V2O3 have been studied for in the form of epitaxial thin films grown on alpha-Al2O3 (0001) and LiTaO3 (0001) substrates. A metallic phase is stabilized down to 2 K in the V2O3 thin film on alpha-Al2O3 (0001), where the a-axis is compressed by 4% owing to large epitaxial stress. On the other hand, the transition temperature T-MI is raised by 20 K from the value of 170 K in bulk samples in the film on LiTaO3 (0001), where the a-axis is expanded. These results suggest an intimate relationship between the a-axis length and T-MI, in V2O3. The conductivity of the metallic ultrathin films shows logarithmic temperature dependence below 20 K, probably due to the Anderson localization in two-dimensional systems. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码：245 / 248
页数：4
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