ESD protection structure with reduced capacitance and overshoot voltage for high speed interface applications

被引：11

作者：

Dong, Aihua ^{[1
]}

Salcedo, Javier A. ^{[2
]}

Parthasarathy, Srivatsan ^{[2
]}

Zhou, Yuanzhong ^{[2
]}

Luo, Sirui ^{[2
]}

Hajjar, Jean Jacques ^{[2
]}

Liou, Juin J. ^{[1
]}

机构：

[1] Univ Cent Florida, Orlando, FL 32816 USA

[2] Analog Devices Inc, Wilmington, MA USA

来源：

MICROELECTRONICS RELIABILITY | 2017年 / 79卷

关键词：

Electrostatic discharge; Linear capacitance; High speed data converter interface; SILICON-CONTROLLED RECTIFIER; RF; DIODE;

D O I：

10.1016/j.microrel.2017.03.014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dual diodes with embedded silicon controlled rectifier (DD-SCR) for high-speed applications are presented. A new DD-SCR topography is shown to exhibit a high failure current (42), small on-state resistance (RoN), low voltage overshoot and low parasitic capacitance. This is a preferred device option for broadband high-speed data converter applications in advanced 28 nm CMOS processes. A comprehensive device characterization demonstrates the design tradeoffs and the superior ESD performance in relation to the devices' variations capacitance in the sub 40 fF range. (C) 2017 Elsevier Ltd. All rights reserved.

引用

收藏

页码：201 / 205

页数：5

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