Stress relaxation of Si/Si1-x Gex/Si structure prepared by ion implantation and subsequent annealing process

被引：1

作者：

Xu Wenting ^{[1
]}

Tu Hailing ^{[1
]}

Chang Qing ^{[2
]}

Xiao Qinghua ^{[2
]}

机构：

[1] Gen Res Inst Nonferrous Met, Beijing 100088, Peoples R China

[2] GRINM Semicond Mat Co Ltd, Beijing 100088, Peoples R China

来源：

RARE METALS | 2011年 / 30卷 / 03期

关键词：

silicon wafers; stress; stress relaxation; ion implantation; annealing; SIGE BUFFER LAYERS; STRAIN; SILICON;

D O I：

10.1007/s12598-011-0381-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The stress relaxation of Ge-74(+)-implanted (100) silicon wafers was investigated. The implantation energy as a function of Si/Si1-x Ge (x) /Si structure fluence and two kinds of thermal annealing were reported. The stress and stress relaxation after thermal annealing were calculated on the basis of Raman analysis, and were compared with those obtained from the calculation of virgin Si.

引用

页码：270 / 273

页数：4

共 13 条

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