Room-Temperature Annealing of 1 MeV Electron Irradiated Lattice Matched In0.53Ga0.47As/InP Multiple Quantum Wells

被引：0

作者：

Wang Hai-Jiao ^{[1
,2
,3
]}

Li Yu-Dong ^{[1
,2
]}

Guo Qi ^{[1
,2
]}

Ma Li-Ya ^{[1
,2
,3
]}

Wen Lin ^{[1
,2
]}

Wang Bo ^{[1
,2
,3
]}

机构：

[1] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China

[2] Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2015年 / 32卷 / 05期

关键词：

PROTON IRRADIATION; INTERSUBBAND TRANSITIONS; INFRARED PHOTODETECTORS; INGAAS/GAAS; DOTS; PHOTOLUMINESCENCE; DETECTORS; LASERS;

D O I：

10.1088/0256-307X/32/5/056102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Long-term room-temperature annealing effects of InGaAs/InP quantum wells with different wells (namely triple wells and five wells embedded) and bulk InGaAs are investigated after high energy electron irradiation. It is observed that the photoluminescence (PL) intensity of bulk InGaAs materials is enhanced after low dose electron irradiation and the PL intensity for all the three samples is degraded dramatically when the electron dose is relatively high. With respect to the room-temperature annealing, we find that the PL intensity for both samples recovers relatively fast at the initial stage. The PL performance of multiple quantum-well samples shows better recovery after irradiation compared with the results of bulk InGaAs materials. Meanwhile, the recovery speed factors of multiple quantum-well samples are relatively faster than those of the bulk InGaAs materials as well. We infer that the recovery difference between the quantum-well materials and bulk materials originates from the fact that the radiation induced defects are confined in the quantum wells as a consequence of the free energy barrier between the In0.53Ga0.47As wells and InP barrier layers.

引用

页数：4

共 29 条

[1] Optical properties of electron beam and γ-ray irradiated InGaAs/GaAs quantum well and quantum dot structures [J].

Aierken, A. ;

Guo, Q. ;

Huhtio, T. ;

Sopanen, M. ;

He, Ch F. ;

Li, Y. D. ;

Wen, L. ;

Ren, D. Y. .

RADIATION PHYSICS AND CHEMISTRY, 2013, 83 :42-47

[2] Diffraction-Grating-Coupled High Quantum Efficiency InP/InGaAs Quantum Well Infrared Photodetector Focal Plane Array [J].

Arslan, Yetkin ;

Colakoglu, Tahir ;

Besikci, Cengiz .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2013, 49 (02) :186-195

[3] Displacement damage effects in InGaAs detectors: Experimental results and semi-empirical model prediction [J].

Barde, S ;

Ecoffet, R ;

Costeraste, J ;

Meygret, A ;

Hugon, X .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (06) :2466-2472

[4]

Claeys C, 2008, RAD EFFECTS ADV SEMI

[5] Improved carrier collection in intermixed InGaAs/GaAs quantum wells [J].

Dao, LV ;

Johnston, MB ;

Gal, M ;

Fu, L ;

Tan, HH ;

Jagadish, C .

APPLIED PHYSICS LETTERS, 1998, 73 (23) :3408-3410

[6] Metallic subwavelength-cavity semiconductor nanolasers [J].

Ding, K. ;

Ning, C. Z. .

LIGHT-SCIENCE & APPLICATIONS, 2012, 1 :e20-e20

[7] Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers [J].

Fu, L ;

Tan, HH ;

Johnston, MB ;

Gal, M ;

Jagadish, C .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (09) :6786-6789

[8] Proton irradiation-induced intermixing in InxGa1-xAs/InP quantum wells -: the effect of In composition [J].

Gareso, P. L. ;

Buda, M. ;

Fu, L. ;

Tan, H. H. ;

Jagadish, C. ;

Dao, L. V. ;

Wen, X. ;

Hannaford, P. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (10) :1441-1446

[9] Large-aperture multiple quantum well modulating retroreflector for free-space optical data transfer on unmanned aerial vehicles [J].

Gilbreath, GC ;

Rabinovich, WS ;

Meehan, TJ ;

Vilcheck, MJ ;

Mahon, R ;

Burris, R ;

Ferraro, M ;

Solkolsky, I ;

Vasquez, JA ;

Bovais, CS ;

Cochrell, K ;

Goins, KC ;

Barbehenn, R ;

Katzer, DS ;

Ikossi-Anastasiou, K ;

Montes, MJ .

OPTICAL ENGINEERING, 2001, 40 (07) :1348-1356

[10] Radiation hardness of InGaAs/GaAs quantum dots [J].

Guffarth, F ;

Heitz, R ;

Geller, M ;

Kapteyn, C ;

Born, H ;

Sellin, R ;

Hoffmann, A ;

Bimberg, D ;

Sobolev, NA ;

Carmo, MC .

APPLIED PHYSICS LETTERS, 2003, 82 (12) :1941-1943

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