Crystallographic structure of InAs nanowires studied by transmission electron microscopy

被引：49

作者：

Tomioka, Katsuhiro ^{[1
,2
]}

Motohisa, Junichi ^{[1
,2
]}

Hara, Shinjiroh ^{[1
,2
]}

Fukui, Takashi ^{[1
,2
]}

机构：

[1] RCIQE, Sapporo, Hokkaido 0600814, Japan

[2] Grad Sch Informat Sci Technol, Sapporo, Hokkaido 0600814, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 45-49期

关键词：

nanowire; InAs; selective-area growth; MOVPE; transmission electron microscope;

D O I：

10.1143/JJAP.46.L1102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Crystallographic structure of InAs nanowires, which were grown by selective-area metalorganic vapor phase epitaxy on (111)B-oriented substrates, was investigated by transmission electron microscopy (TEM). The TEM images showed that the nanowires had many stacking faults along the growth direction. Statistical analysis of the atomic-layer stacking showed that InAs nanowires contained both zincblende and wurtzite crystal phases, whose transition took place in every one to three monolayers. This specific crystal phase transition resulted in peculiar electron diffraction patterns. The stacking of the atomic layers had no distinct correlation with the diameter of the nanowires.

引用

页码：L1102 / L1104

页数：3

共 11 条

[1] An empirical potential approach to wurtzite-zinc-blende polytypism in group III-V semiconductor nanowires [J].

Akiyama, T ;

Sano, K ;

Nakamura, K ;

Ito, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (8-11) :L275-L278

[2] Metalorganic vapor-phase epitaxial growth and characterization of vertical InP nanowires [J].

Bhunia, S ;

Kawamura, T ;

Watanabe, Y ;

Fujikawa, S ;

Tokushima, K .

APPLIED PHYSICS LETTERS, 2003, 83 (16) :3371-3373

[3] GAAS FREESTANDING QUANTUM-SIZE WIRES [J].

HIRUMA, K ;

YAZAWA, M ;

HARAGUCHI, K ;

OGAWA, K ;

KATSUYAMA, T ;

KOGUCHI, M ;

KAKIBAYASHI, H .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (05) :3162-3171

[4] Structural properties of (111)B-oriented III-V nanowires [J].

Johansson, J ;

Karlsson, LS ;

Svensson, CPT ;

Martensson, T ;

Wacaser, BA ;

Deppert, K ;

Samuelson, L ;

Seifert, W .

NATURE MATERIALS, 2006, 5 (07) :574-580

[5] CRYSTAL-STRUCTURE CHANGE OF GAAS AND INAS WHISKERS FROM ZINCBLENDE TO WURTZITE TYPE [J].

KOGUCHI, M ;

KAKIBAYASHI, H ;

YAZAWA, M ;

HIRUMA, K ;

KATSUYAMA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (07) :2061-2065

[6] Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires [J].

Larsson, Magnus W. ;

Wagner, Jakob B. ;

Wallin, Mathias ;

Hakansson, Paul ;

Froberg, Linus E. ;

Samuelson, Lars ;

Wallenberg, L. Reine .

NANOTECHNOLOGY, 2007, 18 (01)

[7] Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays [J].

Mohan, P ;

Motohisa, J ;

Fukui, T .

NANOTECHNOLOGY, 2005, 16 (12) :2903-2907

[8] Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates [J].

Motohisa, J ;

Noborisaka, J ;

Takeda, J ;

Inari, M ;

Fukui, T .

JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) :180-185

[9] Growth of highly uniform InAs nanowire arrays by selective-area MOVPE [J].

Tomioka, K. ;

Mohan, P. ;

Noborisaka, J. ;

Hara, S. ;

Motohisa, J. ;

Fukui, T. .

JOURNAL OF CRYSTAL GROWTH, 2007, 298 (SPEC. ISS) :644-647

[10]

TOMIOKA K, UNPUB

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