Pyroelectric Effect in InxGa1-xN/GaN Heterostructure

The effect of built-in-polarization field on thermal conductivity of InxGa(1-x)N/GaN heterostructure has been theoretically investigated. The thermal conductivity of InxGa1-xN alloy has been estimated for In contents x = 0.2, 0.5 and 0.8. Thermal conductivity analysis reveals the signature of pyroelectric effect in InxGa1-x N/GaN heterostructure. At a particular temperature both the thermal conductivity curves cross each other which is known as pyroelectric transition temperature. Below this temperature thermal conductivity with polarization field is lower than that of without polarization field whereas above this temperature, thermal conductivity is significantly enhanced by the polarization field. This signifies the variation of polarization field with temperature. The pyroelectric transition temperatures have been predicted as 280K, 190K and 330K in an InxGa1-xN film of thickness L = 100nm for the above In contents.