High temperature annealing of Europium implanted AlN

被引：7
作者：
Lorenz, K. [1 ,2 ]
Magalhaes, S. [1 ,3 ,4 ]
Alves, E. [1 ,2 ]
Peres, M. [3 ,4 ]
Monteiro, T. [3 ,4 ]
Neves, A. J. [3 ,4 ]
Bockowski, M. [5 ]
机构：
[1] Inst Tecnol & Nucl, UFA, P-2686953 Sacavem, Portugal
[2] Univ Lisbon, CFN, P-1649003 Lisbon, Portugal
[3] Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal
[4] Univ Aveiro, I3N, P-3810193 Aveiro, Portugal
[5] Polish Acad Sci, Inst High Pressure Phys, PL-01142 Warsaw, Poland
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2010年 / 268卷 / 19期
关键词：
Aluminium Nitride; Rare Earth; Implantation; Rutherford Backscattering Spectrometry; Photoluminescence; ELECTROLUMINESCENT DEVICES; COMPOUND-CRYSTALS; LUMINESCENCE; EMISSION; GROWTH; FILMS; GAN; ER;
D O I：
10.1016/j.nimb.2010.05.003
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
AlN was implanted with 300 key Eu ions within a wide fluence range from 4 x 10(14) to 1.4 x 10(12) at/cm(2). The damage build-up was investigated by Rutherford Backscattering/Channelling. Sigmoidal shaped damage build-up curves indicate efficient dynamic annealing. A regime with low damage increase for fluences below 10(15) at/cm(2) is followed by a strong increase for intermediate fluences. For the highest fluences the damage curve rises slowly until a buried amorphous layer is formed. High temperature annealing was performed in nitrogen atmospheres at low pressure (1300 degrees C, 10(5) Pa) or at ultra-high pressure (1450 degrees C, 10(9) Pa). Implantation damage was found to be extremely stable and annealing only resulted in slight structural recovery. For high fluences out-diffusion of Eu is observed during annealing. Nevertheless, photoluminescence (PL) measurements show intense Eu-related red light emission for all samples with higher PL intensity for the high temperature high pressure annealing. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：2907 / 2910
页数：4
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